SLB14N50C Datasheet, Maple Semiconductor

- 13.5A, 500V, RDS(on) = 0.48Ω@VGS = 10 V - Low gate charge ( typical 46nC) - High ruggedness - Fast switching - 100% avalanche tested - Improved dv/dt capability D D D.

This Power MOSFET is produced using Maple semi‘s advanced planar stripe DMOS technology. This advanced technology has been especially tailored to minimize on-state resistance, provide superior switching performance, and withstand high energy pulse in.